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| 2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Low frequency amplification, driver External dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 Structure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XZ Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 2 4 0.5 2 150 -55 to +150 1 2 3 Packaging specifications Unit V V V A W C C Package Packaging type Code Part No. 2SD2679 Basic ordering unit (pieces) MPT3 Taping T100 1000 1 Pw=1ms, single pulse. 2 Each terminal mounted on a recommended land. 3 Mounted on a 40x40x0.7mm ceramic board. Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit 30 30 6 - - - 270 - - - - - - - 180 - 280 20 - - - 100 100 370 680 - - nA mV - pF V IC=1mA IC=10A IE=10A VCB=30V VEB=6V Conditions IC/IB=1.5A/75mA VCE=2V, IC=200mA VCB=10V , IE=0mA , f=1MHz MHz VCE=2V, IE= -200mA , f=100MHz 1/2 2SD2679 Transistors Electrical characteristics curves BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=125 C VCE=-2V Pulsed 10 IC/IB=20/1 Pulsed 10 IC/IB=20/1 Pulsed DC CURRENT GAIN : hFE Ta=25 C Ta=-25 C 1 Ta=-25 C Ta=25 C 1 Ta=-25 C Ta=25 C Ta=125 C 0.1 Ta=125 C 100 10 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) VCE=-2V Pulsed Ta=125 C Ta=25 C COLLECTOR CURRENT : IC (A) Ta=25 C VCE=-2V f= 100MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 1000 1000 IC=0A f=1MHz Cob Ta=25 C 1 0.1 Ta=-25 C 100 100 Cib 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 10 0.01 0.1 1 10 10 0.001 0.01 0.1 1 10 100 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output chapacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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